Thomas Koprucki, Christian Bayer
01.01.2021 − 31.12.2021
D. Chaudhuri, M. O’Donovan, T. Streckenbach, O. Marquardt, P. Farrell, S. K. Patra, T. Koprucki, and S. Schulz, Multiscale simulations of the electronic structure of III-nitride quantum wells with varied indium content: Connecting atomistic and continuum-based models. J. Appl. Phys. 129, 073104 (2021)
Ground state transition energies in (In,Ga)N/GaN quantum wells as a function of the In content x comparing tight-binding (black) and effective mass approximation results with (green) and without (blue) energy shift. Data is averaged over ten different microscopic configurations per In content. The standard deviation is indicated as error bars.