IN – Track B



Understanding doping variations in silicon crystals

Project Heads

Nella Rotundo, Patricio Farrell, Natascha Dropka

Project Members

Stefan Kayser (WIAS)

Project Duration

01/01/2020 – 31/12/2020

Located at

Weierstrass Institute Berlin (WIAS)


The Leibniz Institute for Crystal Growth is developing affordable crystal growth technique for pure silicon crystals. We provide numerical input to understand how impurities introduced during the growth process can be measured. To this end, we replace inflexible blackbox code with a physics preserving FV discretization to tackle unsolved problems such as slow convergence for low doping densities, parameter reduction and suitable anisotropic grids.

Selected Publications

Selected Pictures

Doping gradient and LPS voltage

Alignment between gradient of doping concentration and LPS voltage
for a laser beam sampling along the x axis.

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