Incubator Projects

Project

IN-7

Electronic Properties of Gate-Confi ned Quantum Dots in Si-Ge Heterostructures for Qubit Generation

Project Heads

Thomas Koprucki (WIAS), Alexander Mielke (WIAS), Torsten Boeck (IKZ), Oliver Brandt (PDI)

Project Members

Oliver Marquardt (WIAS)

Project Duration

01.01.2022 – 31.12.2022

Located at

WIAS

Description

Gate-de fined quantum dots in Si-Ge heterostructures are promising candidates for realizing qubits in quantum processors. We will develop novel k⋅p models for the electronic states in Si-Ge based qubits, and establish an expertise network for quantum technological devices comprised of researchers in mathematics and semiconductor physics within Berlin.

Project Webpages

Selected Publications

Selected Pictures

Top left: schematic of a gate-defined quantum dot (www.quantuminfo.physik.rwth-aachen.de). Bottom left: XTEM image of a 28 Si/(Si,Ge) film (courtesy of Yujia Liu, IKZ). Top Right: Available Linux distributions for the SPHInX package at Open Build Service. A version for Arch Linux is also available via Arch User Repository (AUR). Bottom right: Simulation work flow for Qubit devices.

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