Incubator Projects



Electronic Properties of Gate-Confi ned Quantum Dots in Si-Ge Heterostructures for Qubit Generation

Project Heads

Thomas Koprucki (WIAS), Alexander Mielke (WIAS), Torsten Boeck (IKZ), Oliver Brandt (PDI)

Project Members

Oliver Marquardt (WIAS)

Project Duration

01.01.2022 – 31.12.2022

Located at



Gate-de fined quantum dots in Si-Ge heterostructures are promising candidates for realizing qubits in quantum processors. We will develop novel k⋅p models for the electronic states in Si-Ge based qubits, and establish an expertise network for quantum technological devices comprised of researchers in mathematics and semiconductor physics within Berlin.

Project Webpages

Selected Publications

Selected Pictures

Top left: schematic of a gate-defined quantum dot ( Bottom left: XTEM image of a 28 Si/(Si,Ge) film (courtesy of Yujia Liu, IKZ). Top Right: Available Linux distributions for the SPHInX package at Open Build Service. A version for Arch Linux is also available via Arch User Repository (AUR). Bottom right: Simulation work flow for Qubit devices.

Please insert any kind of pictures (photos, diagramms, simulations, graphics) related to the project in the above right field (Image with Text), by choosing the green plus image on top of the text editor. (You will be directed to the media library where you can add new files.)
(We need pictures for a lot of purposes in different contexts, like posters, scientific reports, flyers, website,…
Please upload pictures that might be just nice to look at, illustrate, explain or summarize your work.)

As Title in the above form please add a copyright.

And please give a short description of the picture and the context in the above textbox.

Don’t forget to press the “Save changes” button at the bottom of the box.

If you want to add more pictures, please use the “clone”-button at the right top of the above grey box.