Project
IN-7
Electronic Properties of Gate-Confi ned Quantum Dots in Si-Ge Heterostructures for Qubit Generation
Project Heads
Thomas Koprucki (WIAS), Alexander Mielke (WIAS), Torsten Boeck (IKZ), Oliver Brandt (PDI)
Project Members
Oliver Marquardt (WIAS)
Project Duration
01.01.2022 – 31.12.2022
Located at
WIAS
Description
Gate-de fined quantum dots in Si-Ge heterostructures are promising candidates for realizing qubits in quantum processors. We will develop novel k⋅p models for the electronic states in Si-Ge based qubits, and establish an expertise network for quantum technological devices comprised of researchers in mathematics and semiconductor physics within Berlin.
The Workshop “Computing the Electronic Properties of Semiconductor Nanostructures using the SPHInX library” is hosted at WIAS via Project IN-7
Project Webpages
Selected Publications
Selected Pictures
Top left: schematic of a gate-defined quantum dot (www.quantuminfo.physik.rwth-aachen.de). Bottom left: XTEM image of a 28 Si/(Si,Ge) film (courtesy of Yujia Liu, IKZ). Top Right: Available Linux distributions for the SPHInX package at Open Build Service. A version for Arch Linux is also available via Arch User Repository (AUR). Bottom right: Simulation work flow for Qubit devices.
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