AA2 – Materials, Light, Devices

Project

AA2-13

 

Data-Driven Stochastic Modeling of Semiconductor Lasers

Project Heads

Uwe Bandelow, Markus Kantner, Wilhelm Stannat (since 01/2022), Hans Wenzel

Project Members

Lutz Mertenskötter

Project Duration

First funding period: 01.01.2021 − 31.12.2021; second funding period: 01.01.2022 − 31.12.2024

Located at

WIAS

Description

Narrow-linewidth lasers are key elements of coherent communication systems, optical atomic clocks, matter-wave interferometers, ion-trap quantum computers and gravitational wave detectors. The spectral width of the emitted optical power spectrum of a laser is essentially determined by its frequency noise power spectral density (FN-PSD), that is influenced by numerous stochastic processes. The standard (Markovian) laser linewidth theory (see Wenzel et al. (2021) for a review) is restricted to Gaussian white noise (in particular spontaneous emission of photons into the laser mode), which predicts a spectrally flat FN-PSD that is associated with a Lorentzian lineshape and the so-called intrinsic linewidth. This model is sufficient for most applications, however, a realistic description of ultra-narrow linewidth lasers requires the inclusion of additional non-Markovian noise components to match the experimental observations. These colored noise processes lead to significant line broadening, but as their modeling from first principles (i.e., quantum Langevin equations) is hardly accessible, only few non-Markovian stochastic laser theories exist. In this project, we pursue a data-driven modeling approach to reconstruct a non-Markovian stochastic semiconductor laser model from experimental time series using data assimilation techniques.

 

The application goal of the project is the theory-based optimization of extended cavity diode lasers for space-based metrology systems. For this, delayed stochastic differential equation models and stochastic partial differential equation models shall be developed in order to facilitate the understanding of performance bottlenecks and in order to support the identification of an optimal laser design and suitable control schemes.

Related Publications

  • H. Wenzel, M. Kantner, M. Radziunas and U. Bandelow: Semiconductor Laser Linewidth Theory Revisited, Appl. Sci. 11, 6004 (2021)
  • L. Mertenskötter, K. Busch and R. de J. León-Montiel: Entangled two-photon absorption spectroscopy with varying pump wavelength, J. Opt. Soc. Am. B 38, C63-C68 (2021)
  • V. Tronciu, N. Werner, H. Wenzel, and H.-J. Wünsche: Feedback Sensitivity of Detuned DBR Semiconductor Lasers, IEEE J. Quantum Electron. 57, 2100107 (2021)
  • S. Amiranashvili, M. Radziunas, U. Bandelow, K. Busch and R. Ciegis: Additive splitting methods for parallel solution of evolution problems, J. Comp. Phys. 436, 110320 (2021)
  • M. Kantner: Electrically Driven Quantum Dot Based Single-Photon Sources: Modeling and Simulation. Springer Theses. Springer Nature, Cham (2020)

 

Related Pictures

Extended cavity diode laser
Schematic view of an extended cavity diode laser.
Optical power spectrum (line shape) of an extended cavity semiconductor laser diode with coherent optical feedback driven by fractional Gaussian noise.